GB/T 6620-2009
ActiveTest method for measuring warp on silicon slices by noncontact scanning
硅片翘曲度非接触式测试方法
Application Summary AI generated
This standard specifies a non-contact, laser-based scanning method for measuring the warp of silicon wafers used in semiconductor manufacturing. It is applied in the production and quality control of polished or epitaxial silicon wafers to ensure they meet flatness requirements for photolithography processes. The test is critical for preventing defects in integrated circuit fabrication, where wafer deformation can cause alignment errors and yield loss.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.