GB/T 6616-2009
AbolishedTest methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
半导体硅片电阻率及硅薄膜薄层电阻测试方法 非接触涡流法
Application Summary AI generated
This standard specifies the test methods for measuring the resistivity of semiconductor wafers and the sheet resistance of semiconductor films using a noncontact eddy-current gauge. It is applied in the semiconductor manufacturing industry for quality control and process monitoring of silicon wafers and thin films, particularly where contact-based measurements could damage the material or introduce contamination. The standard is used in production lines, research laboratories, and incoming inspection to ensure electrical properties meet design specifications.
Related Standards
GB/T 12964-2003
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GB/T 16596-1996
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Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
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GB/T 20229-2006
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Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.