GB/T 4058-2009

Active

Test method for detection of oxidation induced defects in polished silicon wafers

硅抛光片氧化诱生缺陷的检验方法

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Active

Issue Date

2009-10-30

Implementation

2010-06-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the test method for detecting oxidation-induced defects in polished silicon wafers, including sample preparation, oxidation conditions, and defect evaluation criteria. It is applied in the semiconductor industry for quality control of silicon wafers used in integrated circuit and discrete device manufacturing. The method ensures wafer surface and subsurface integrity by identifying defects that could compromise device performance during thermal oxidation processes.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.