GB/T 37051-2018
ActiveTest method for determination of crystal defect density in PV silicon ingot and wafer
太阳能级多晶硅锭、硅片晶体缺陷密度测定方法
Application Summary AI generated
This standard specifies the test method for determining the density of crystal defects, such as dislocations and grain boundaries, in photovoltaic (PV) silicon ingots and wafers. It is applied in the solar energy industry for quality control and material characterization during the production of multicrystalline silicon wafers used in solar cells. The method ensures consistent defect measurement, which directly impacts cell efficiency and reliability.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.