GB/T 35308-2017
ActiveEpitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell
太阳能电池用锗基Ⅲ-Ⅴ族化合物外延片
Application Summary AI generated
This standard specifies the technical requirements, test methods, inspection rules, and packaging for epitaxial wafers of germanium-based III-V compound semiconductors used in solar cells. It is applied in the manufacturing and quality control of multi-junction solar cells for space satellites, high-altitude drones, and concentrated photovoltaic (CPV) systems where high efficiency and radiation resistance are critical. The standard ensures consistency in wafer performance, such as layer thickness, doping concentration, and defect density, for reliable device fabrication.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.