GB/T 32651-2016
ActiveTest method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
采用高质量分辨率辉光放电质谱法测量太阳能级硅中痕量元素的测试方法
Application Summary AI generated
This standard specifies a test method for measuring trace element concentrations in photovoltaic-grade silicon using high-mass resolution glow discharge mass spectrometry. It is applied in the solar industry for quality control and material characterization of silicon feedstock used in manufacturing solar cells. The method ensures precise detection of impurities that can affect the electrical performance and efficiency of photovoltaic devices.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.