GB/T 32277-2015
ActiveTest method for instrumental neutron activation analysis (INAA) of silicon
硅的仪器中子活化分析测试方法
Application Summary AI generated
This standard specifies the test method for determining trace element impurities in silicon materials using instrumental neutron activation analysis (INAA). It is applied in the semiconductor industry for quality control and purity assessment of silicon used in electronic devices, such as integrated circuits and solar cells. The method is particularly relevant for detecting ultra-low concentrations of contaminants that could affect electrical performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.