GB/T 31854-2015
ActiveTest method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
光伏电池用硅材料中金属杂质含量的电感耦合等离子体质谱测量方法
Application Summary AI generated
This standard specifies a test method using inductively coupled plasma mass spectrometry (ICP-MS) to measure the content of metallic impurities in silicon materials intended for photovoltaic applications. It is applied in the quality control and material testing of silicon feedstock, ingots, and wafers used in solar cell manufacturing, ensuring that impurity levels meet the purity requirements for efficient photovoltaic performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.