GB/T 30868-2014
AbolishedTest method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
碳化硅单晶片微管密度的测定 化学腐蚀法
Application Summary AI generated
This standard specifies a chemically etching method to determine the micropipe density in monocrystalline silicon carbide wafers. It is applied in the semiconductor industry for quality control and material characterization of SiC substrates used in high-power and high-frequency electronic devices. The test ensures wafer reliability by quantifying structural defects that can degrade device performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.