GB/T 30867-2014

Abolished

Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

碳化硅单晶片厚度和总厚度变化测试方法

Standard Type

GBT

ICS

29.045

CCS

H83

Status

Abolished

Issue Date

2014-07-24

Implementation

2015-02-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the test method for measuring the thickness and total thickness variation of monocrystalline silicon carbide wafers. It is applied in the semiconductor industry for quality control during the manufacturing and inspection of silicon carbide substrates used in high-power, high-frequency electronic devices. The method ensures wafers meet precise dimensional tolerances required for reliable device fabrication.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.