GB/T 30866-2014
AbolishedTest method for measuring diameter of monocrystalline silicon carbide wafers
碳化硅单晶片直径测试方法
Application Summary AI generated
This standard specifies the test method for measuring the diameter of monocrystalline silicon carbide wafers, which are used as substrates in high-power, high-frequency, and optoelectronic semiconductor devices. It is applied in the manufacturing and quality inspection of silicon carbide wafers within the semiconductor industry, ensuring dimensional consistency for subsequent device fabrication processes. The method is particularly relevant for production lines and testing laboratories handling 4-inch, 6-inch, or other standard wafer sizes.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.