GB/T 30855-2014
ActiveGaP substrates for LED epitaxial chips
LED外延芯片用磷化镓衬底
Application Summary AI generated
This standard specifies the technical requirements, test methods, inspection rules, and packaging for gallium phosphide (GaP) substrates used in the production of LED epitaxial chips. It is applied in the semiconductor manufacturing industry, specifically for fabricating red and yellow-green LED epitaxial wafers where GaP substrates provide lattice matching and optical transparency. The standard ensures substrate quality for epitaxial growth processes in optoelectronic device production.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.