GB/T 30652-2014
AbolishedTrichlorosilane for silicon epitaxial
硅外延用三氯氢硅
Application Summary AI generated
GB/T 30652-2014 specifies the technical requirements, test methods, inspection rules, and packaging for trichlorosilane used in silicon epitaxial growth. It is applied in the semiconductor industry for producing high-purity silicon epitaxial layers on silicon wafers, particularly in the manufacturing of integrated circuits and discrete devices. The standard ensures the chemical purity and quality consistency of trichlorosilane as a precursor in chemical vapor deposition (CVD) processes.
Related Standards
GB/T 12964-2003
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GB/T 16596-1996
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GB/T 16595-1996
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Monocrystalline silicon as cut slices and lapped slices
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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.