GB/T 30453-2013
ActiveMetallographs collection for original defects of crystalline silicon
硅材料原生缺陷图谱
Application Summary AI generated
GB/T 30453-2013 provides a standardized visual reference of metallographic images documenting original defects in crystalline silicon materials. It is applied in the semiconductor and photovoltaic industries for quality inspection and defect identification during silicon wafer manufacturing. The standard aids engineers in classifying and comparing defects like dislocations, stacking faults, and precipitates to ensure material purity and device performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.