GB/T 29852-2013
ActiveTest method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
光伏电池用硅材料中P、As、Sb施主杂质含量的二次离子质谱测量方法
Application Summary AI generated
This standard specifies a secondary ion mass spectrometry (SIMS) method for measuring the concentration of phosphorus, arsenic, and antimony donor impurities in silicon materials intended for photovoltaic applications. It is applied in the quality control and material characterization of polysilicon, monocrystalline silicon, and multicrystalline silicon used in solar cell manufacturing. The test ensures that dopant levels meet purity requirements critical for achieving desired electrical performance in photovoltaic devices.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.