GB/T 29851-2013
ActiveTest method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
光伏电池用硅材料中B、Al受主杂质含量的二次离子质谱测量方法
Application Summary AI generated
This standard specifies a test method using secondary ion mass spectrometry (SIMS) to measure the concentration of boron and aluminum acceptor impurities in silicon materials intended for photovoltaic applications. It is applied in the quality control and material characterization of silicon wafers and ingots used for solar cell manufacturing, ensuring that dopant levels meet specifications for optimal electrical performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.