GB/T 29850-2013
ActiveTest method for measuring compensation degree of silicon materials used for photovoltaic applications
光伏电池用硅材料补偿度测量方法
Application Summary AI generated
This standard specifies a test method for measuring the compensation degree of silicon materials used in photovoltaic applications, which quantifies the ratio of donor to acceptor impurities in the silicon. It is applied by manufacturers and quality control laboratories to evaluate the electrical performance and suitability of silicon wafers or ingots for solar cell production. The method ensures that the silicon material meets the required purity and doping balance for efficient photovoltaic energy conversion.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.