GB/T 29849-2013

This standard specifies a test method using inductively coupled plasma mass spectrometry (ICP-MS) to measure the concentration of metallic contaminants on the surface of silicon materials intended for photovoltaic applications. It is applied in the quality control and manufacturing processes of solar-grade silicon wafers and ingots, ensuring that surface metal impurities do not degrade the electrical performance and efficiency of solar cells. The method is critical for material suppliers and solar cell producers to verify compliance with purity requirements in the photovoltaic industry.