GB/T 29507-2013
ActiveTest method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning
硅片平整度、厚度及总厚度变化测试 自动非接触扫描法
Application Summary AI generated
This standard specifies a test method for measuring the flatness, thickness, and total thickness variation of silicon wafers using automated non-contact scanning technology. It is applied in the semiconductor industry for quality control and process monitoring of polished or epitaxial silicon wafers used in integrated circuit fabrication. The method ensures precise dimensional characterization essential for device yield and lithographic performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.