GB/T 29057-2012
AbolishedPractice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
用区熔拉晶法和光谱分析法评价多晶硅棒的规程
Application Summary AI generated
This standard specifies a method for evaluating the quality of polycrystalline silicon rods by converting them into single crystals via float-zone crystal growth and then analyzing their impurity content using spectroscopy. It is primarily applied in the semiconductor and photovoltaic industries to assess the purity and suitability of polysilicon feedstock for manufacturing high-efficiency solar cells or electronic-grade silicon wafers. The practice ensures consistent material quality control during production and procurement of polysilicon rods.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.