GB/T 26068-2010
AbolishedTest method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
硅片载流子复合寿命的无接触微波反射光电导衰减测试方法
Application Summary AI generated
This standard specifies a non-contact test method for measuring carrier recombination lifetime in silicon wafers using microwave reflectance photoconductivity decay. It is applied in the semiconductor industry for quality control and characterization of silicon wafers used in solar cells and integrated circuits, ensuring material purity and performance without damaging the sample.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.