GB/T 26066-2010

Active

practice for shallow etch pit detection on silicon

硅晶片上浅腐蚀坑检测的测试方法

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Active

Issue Date

2011-01-10

Implementation

2011-10-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies a test method for detecting shallow etch pits on the surface of silicon wafers, which are critical defects affecting device performance. It is applied in the semiconductor manufacturing industry for quality control and inspection of polished or epitaxial silicon wafers used in integrated circuit production. The practice involves chemical etching and microscopic examination to identify and count etch pits, ensuring wafer surface integrity before further processing.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.