GB/T 26065-2010

Active

Specification for polished test silicon wafers

硅单晶抛光试验片规范

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Active

Issue Date

2011-01-10

Implementation

2011-10-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

GB/T 26065-2010 specifies the technical requirements, dimensions, and quality criteria for polished single-crystal silicon test wafers used in semiconductor manufacturing. It is applied in the electronics industry for process control, equipment calibration, and contamination monitoring during integrated circuit fabrication. The standard ensures consistency and reliability in testing environments where silicon wafers serve as reference substrates.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.