GB/T 24582-2009
AbolishedTest method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry
酸浸取 电感耦合等离子质谱仪测定多晶硅表面金属杂质
Application Summary AI generated
This standard specifies a test method for measuring trace metal contamination on the surface of polycrystalline silicon using acid extraction combined with inductively coupled plasma mass spectrometry (ICP-MS). It is applied in the semiconductor and photovoltaic industries to assess the purity of polycrystalline silicon feedstock, ensuring it meets quality requirements for solar cell and electronic device manufacturing. The method is used during incoming quality control and process monitoring to detect surface impurities that could degrade device performance.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.