GB/T 24581-2009
AbolishedTest method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
低温傅立叶变换红外光谱法测量硅单晶中III、V族杂质含量的测试方法
Application Summary AI generated
This standard specifies a test method using low-temperature Fourier transform infrared (FT-IR) spectroscopy to measure the content of Group III and Group V impurities in single crystal silicon. It is applied in the semiconductor industry for quality control and material characterization of silicon wafers used in integrated circuit and solar cell manufacturing. The method is particularly relevant for detecting trace dopant elements like boron, phosphorus, and arsenic at low concentrations.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.