GB/T 24580-2009
ActiveTest method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
重掺n型硅衬底中硼沾污的二次离子质谱检测方法
Application Summary AI generated
This standard specifies a test method using secondary ion mass spectrometry (SIMS) to measure boron contamination in heavily doped n-type silicon substrates. It is applied in the semiconductor industry for quality control and process monitoring of silicon wafers used in integrated circuit manufacturing. The method ensures the purity of n-type substrates, which is critical for preventing performance degradation in electronic devices.
Related Standards
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Monocrystalline silicon as cut slices and lapped slices
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Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.