GB/T 24579-2009
ActiveTest method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy
酸浸取 原子吸收光谱法测定多晶硅表面金属污染物
Application Summary AI generated
This standard specifies a test method for measuring trace metal contamination on the surface of polycrystalline silicon using acid extraction followed by atomic absorption spectroscopy. It is applied in the semiconductor and photovoltaic industries to qualify raw silicon feedstock and monitor cleanliness during wafer or ingot production. The method ensures that surface metal levels meet purity requirements critical for device performance and yield.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.