GB/T 24577-2009

Active

Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography

热解吸气相色谱法测定硅片表面的有机污染物

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Active

Issue Date

2009-10-30

Implementation

2010-06-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies a test method for detecting and quantifying organic contaminants on silicon wafer surfaces using thermal desorption gas chromatography. It is applied in the semiconductor manufacturing industry to ensure wafer cleanliness during production processes, particularly for quality control in fabrication facilities where organic residues can affect device performance and yield.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.