GB/T 24575-2009

This standard specifies a test method using secondary ion mass spectrometry (SIMS) to quantitatively measure trace levels of sodium, aluminum, potassium, and iron on the surfaces of silicon wafers and epitaxial substrates. It is applied in the semiconductor manufacturing industry for quality control and contamination monitoring of raw silicon materials and epi wafers, particularly during incoming inspection or process development. The method ensures surface cleanliness critical for device performance and yield in integrated circuit fabrication.