GB/T 1558-2009
AbolishedTest method for substitutional atomic carbon concent of silicon by infrared absorption
硅中代位碳原子含量 红外吸收测量方法
Application Summary AI generated
This standard specifies the infrared absorption method for measuring the concentration of substitutional carbon atoms in silicon crystals. It is primarily applied in the semiconductor industry for quality control of silicon wafers used in integrated circuit and solar cell manufacturing, ensuring material purity and performance. The test is conducted during raw material inspection or process monitoring to detect carbon contamination that can affect device electrical properties.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.