GB/T 1554-2009

Active

Testing method for crystallographic perfection of silicon by preferential etch techniques

硅晶体完整性化学择优腐蚀检验方法

Standard Type
GBT
ICS
29.045
CCS
H80
Status
Active
Issue Date
2009-10-30
Implementation
2010-06-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the chemical preferential etching method for evaluating the crystallographic perfection of silicon wafers and ingots. It is applied in the semiconductor industry to detect and quantify defects such as dislocations, stacking faults, and swirls in single-crystal silicon. The method is used for quality control in silicon wafer manufacturing and for incoming inspection of substrates used in integrated circuit and photovoltaic device production.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.