GB/T 1553-2009
AbolishedTest methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
硅和锗体内少数载流子寿命测定光电导衰减法
Application Summary AI generated
This standard specifies the photoconductivity decay method for measuring minority carrier lifetime in bulk germanium and silicon semiconductors. It is applied in the semiconductor manufacturing industry to evaluate material quality and purity, particularly for wafers and ingots used in electronic devices like diodes and transistors. The testing context involves using pulsed light to generate excess carriers and measuring the decay of photoconductivity to determine lifetime.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.