GB/T 1551-2009

Abolished

Test method for measuring resistivity of monocrystal silicon

硅单晶电阻率测定方法

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Abolished

Issue Date

2009-10-30

Implementation

2010-06-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the test methods for measuring the resistivity of monocrystal silicon, including the four-probe method and the eddy current method. It is applied in the semiconductor industry for quality control and material characterization of silicon wafers used in integrated circuits and photovoltaic devices. The standard ensures consistent measurement procedures for manufacturers and testing laboratories.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.