GB/T 14863-2013
AbolishedMethod for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法
Application Summary AI generated
This standard specifies a test method for determining the net carrier density in silicon epitaxial layers using the voltage-capacitance relationship of gated and ungated diodes. It is applied in the semiconductor industry for quality control and process monitoring of silicon epitaxial wafers used in integrated circuit and discrete device fabrication. The method is particularly relevant for evaluating doping uniformity and layer characteristics in production and research environments.
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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.