GB/T 14847-2010

Abolished

Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Abolished

Issue Date

2011-01-10

Implementation

2011-10-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies a test method for measuring the thickness of lightly doped silicon epitaxial layers grown on heavily doped silicon substrates using infrared reflectance. It is applied in the semiconductor industry for quality control and process monitoring during the fabrication of silicon wafers used in integrated circuits and discrete devices. The method is particularly relevant for epitaxial layer thicknesses ranging from 2 to 100 micrometers.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.