GB/T 14146-2009
AbolishedSilicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
硅外延层载流子浓度测定 汞探针电容-电压法
Application Summary AI generated
This standard specifies the mercury probe capacitance-voltage method for determining the carrier concentration in silicon epitaxial layers. It is primarily applied in the semiconductor manufacturing industry for quality control and characterization of epitaxial wafers used in integrated circuits and discrete devices. The method is particularly useful for non-destructive testing of doping profiles in production and research environments.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.