GB/T 14144-2009

This standard specifies the testing method for measuring the radial variation of interstitial oxygen content in silicon crystals, using Fourier transform infrared spectroscopy (FTIR) to assess oxygen concentration distribution across the wafer diameter. It is applied in the semiconductor industry for quality control of monocrystalline silicon wafers used in integrated circuit and solar cell manufacturing, ensuring uniformity of oxygen content to prevent defects during device fabrication. The method is critical for evaluating silicon ingots and wafers in production lines and research laboratories.