GB/T 14139-2009

Abolished

Silicon epitaxial wafers

硅外延片

Standard Type

GBT

ICS

29.045

CCS

H80

Status

Abolished

Issue Date

2009-10-30

Implementation

2010-06-01

Centralized Committee

国家标准委

Issuing Authority

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

GB/T 14139-2009 specifies the technical requirements, test methods, inspection rules, and packaging for silicon epitaxial wafers used in semiconductor device fabrication. It applies to the production and quality control of epitaxial layers grown on silicon substrates, primarily for manufacturers of integrated circuits, discrete devices, and microelectronic components. The standard ensures consistent electrical properties and structural integrity for applications in high-frequency, power, and logic devices.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.