GB/T 13389-2014
ActivePractice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
掺硼掺磷掺砷硅单晶电阻率与掺杂剂浓度换算规程
Application Summary AI generated
This standard provides a conversion practice between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon single crystals. It is applied in the semiconductor industry for quality control and material characterization of silicon wafers used in integrated circuit and solar cell manufacturing. The standard ensures accurate doping level determination from resistivity measurements, critical for device performance and process consistency.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.