GB/T 13387-2009
ActiveTest method for measuring flat length wafers of silicon and other electronic materials
硅及其他电子材料晶片参考面长度测量方法
Application Summary AI generated
This standard specifies the test method for measuring the reference flat length on wafers made of silicon and other electronic materials. It is applied in the semiconductor industry for quality control and process monitoring of polished or sliced wafers, ensuring dimensional accuracy for photolithography and handling equipment. The method is used during wafer manufacturing and incoming inspection to verify compliance with flat length specifications.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.