GB/T 11094-2007
AbolishedHorizontal bridgman grown gallium arsenide single crystal and cutting wafer
水平法砷化镓单晶及切割片
Application Summary AI generated
This standard specifies the requirements, test methods, inspection rules, and packaging for gallium arsenide single crystals grown by the horizontal Bridgman method and their sliced wafers. It is applied in the semiconductor industry for the production of substrates used in high-frequency electronic devices, optoelectronic components, and integrated circuits. The standard ensures material quality and consistency for manufacturers and users in China.
Related Standards
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 16596-1996
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GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12965-2005
Monocrystalline silicon as cut slices and lapped slices
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11071-2006
Zone-refined germanium ingot
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.