GB/T 6590-1998
ActiveSemiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A
半导体器件 分立器件 第6部分:闸流晶体管 第二篇 100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范
Application Summary AI generated
This standard provides a blank detail specification template for bidirectional triode thyristors (triacs) rated up to 100A, either ambient or case-rated. It is applied in the electronics industry for the qualification and procurement of these semiconductor devices, ensuring consistent documentation of electrical parameters, testing conditions, and reliability requirements. The standard is used by manufacturers and test laboratories to define and verify triac performance in applications such as AC power control, motor speed regulation, and lighting dimming circuits.
Related Standards
GB/T 8446.3-2004
Heat sink for power semiconductor device--Part 3:Insulators and fasteners
GB/T 8446.2-2004
Heat sink for power semiconductor device--Part 2:Measuring method of thermal resistance and inputfluid-output fluid pressure difference
GB/T 8446.1-2004
Heat sink for power semiconductor device--Part 1:Casting kind series
GB/T 13151-2005
Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A
GB/T 13150-2005
Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
GB/Z 107-2025
Semiconductor devices—Scan based ageing level estimation for semiconductor devices
GB/Z 102.17-2026
Semiconductor devices—Discrete devices—Part 17: Magnetic and capacitive coupler for basic and reinforced insulation
GB/T 6589-2002
Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.