GB/T 13151-2005
ActiveSemiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A
半导体器件 分立器件 第6部分:晶闸管 第3篇 电流大于 100A、环境和管壳额定的反向阻断三极晶闸管空白详细规范
Application Summary AI generated
This standard provides a blank detail specification for reverse blocking triode thyristors rated for currents greater than 100A, covering both ambient and case-rated conditions. It is applied in the electronics industry for the design, testing, and procurement of high-power thyristors used in industrial power control systems, such as motor drives, welding equipment, and large power supplies. The standard ensures consistent quality and performance verification for these semiconductor devices across manufacturing and application contexts.
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Letter symbols for discrete semiconductor devices
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.