GB/T 6351-1998

Active

Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A

半导体器件 分立器件 第2部分:整流二极管 第一篇 100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范

Standard Type
GBT
ICS
31.080.10
CCS
L43
Status
Active
Issue Date
1998-11-17
Implementation
1999-06-01
Centralized Committee
工业和信息化部(电子)
Issuing Authority
工业和信息化部(电子)

Application Summary AI generated

This standard provides a blank detail specification for rectifier diodes, including avalanche types, rated for currents up to 100A under ambient or case-rated conditions. It is applied in the electronics industry for the qualification and procurement of discrete semiconductor devices, ensuring consistent testing and documentation for rectifier diodes used in power supply and conversion circuits.

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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.