GB/T 47239.9-2026

Upcoming

Semiconductor devices—Flexible and stretchable semiconductor devices—Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

半导体器件 柔性可拉伸半导体器件 第9部分:一晶体管一电阻式(1T1R)电阻存储单元性能测试方法

Standard Type
GBT
ICS
31.080.99
CCS
L55
Status
Upcoming
Issue Date
2026-02-27
Implementation
2026-09-01
Centralized Committee
工业和信息化部(电子)
Issuing Authority
国家市场监督管理总局、国家标准化管理委员会

Application Summary AI generated

This standard specifies performance testing methods for 1T1R resistive memory cells used in flexible and stretchable semiconductor devices. It is applied in the electronics industry for evaluating memory retention, switching speed, and endurance of flexible memory components. The standard is particularly relevant for manufacturers and testers of wearable electronics, foldable displays, and other flexible electronic systems requiring non-volatile memory.

Related Standards

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.