GB/T 46717-2025
ActiveSemiconductor devices—Metallization stress void test
半导体器件 金属化空洞应力试验
Application Summary AI generated
This standard specifies the test method for evaluating stress-induced void formation in the metallization layers of semiconductor devices. It is applied in the semiconductor industry for reliability testing of integrated circuits and discrete devices, particularly during process qualification and product monitoring to assess susceptibility to electromigration and thermal stress failures.
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