GB/T 4586-1994

Active

Semiconductor devices--Discrete devices--Part 8:Field-effect transistors

半导体器件 分立器件 第8部分:场效应晶体管

Standard Type
GBT
ICS
31.080
CCS
L42
Status
Active
Issue Date
1994-12-30
Implementation
1995-08-01
Centralized Committee
工业和信息化部（电子）
Issuing Authority
工业和信息化部（电子）

Application Summary AI generated

This standard specifies the essential ratings, characteristics, and test methods for field-effect transistors (FETs) used as discrete semiconductor devices. It is applied in the design, quality assessment, and procurement of FETs for electronic circuits, including amplifiers, switches, and voltage regulators. The standard ensures consistent performance and reliability across consumer electronics, industrial control systems, and telecommunications equipment.

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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.