GB/T 45722-2025
ActiveSemiconductor devices—Constant current electromigration test
半导体器件 恒流电迁移试验
Application Summary AI generated
This standard specifies the test method for evaluating the electromigration resistance of metal interconnects in semiconductor devices under constant current stress. It is applied in the reliability testing and qualification of integrated circuits and discrete semiconductor components, particularly for assessing the long-term failure risk of aluminum or copper interconnect lines in microelectronic manufacturing. The standard is used by semiconductor fabs, testing laboratories, and quality assurance teams to ensure device robustness against current-induced material migration.
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