GB/T 45721.1-2025
ActiveSemiconductor devices—Stress migration test—Part 1: Copper stress migration test
半导体器件 应力迁移试验 第1部分：铜应力迁移试验
Application Summary AI generated
This standard specifies the test method for evaluating stress-induced voiding in copper interconnects within semiconductor devices, focusing on the migration of copper atoms under mechanical stress and elevated temperatures. It is applied in the reliability testing and qualification of integrated circuits and microelectronic components, particularly those using copper metallization in advanced packaging and wafer fabrication. The standard ensures consistent assessment of failure risks in high-performance electronics, such as those used in computing, telecommunications, and automotive systems.
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