GB/T 45720-2025
ActiveSemiconductor devices—Time dependent dielectric breakdown (TDDB) test for gate dielectric films
半导体器件 栅介质层的时间相关介电击穿（TDDB）试验
Application Summary AI generated
This standard specifies the time dependent dielectric breakdown (TDDB) test method for gate dielectric films in semiconductor devices. It is applied in the reliability testing and qualification of metal-oxide-semiconductor (MOS) structures, particularly for evaluating the long-term failure mechanisms of thin gate oxides in integrated circuits. The standard is used by semiconductor manufacturers and quality assurance labs to assess oxide integrity under constant voltage or current stress conditions.
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